Method and apparatus for plasma process
AssigneeHitachi, Ltd.
InventorsFumio Shibata, Katsuaki Nagatomo, Hidetomo Fukuhara, Gen Marumoto, Sadayuki Okudaira
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Abstract
The invention relates to a method and apparatus for a plasma process in which identical samples are processed in a plasma-processing apparatus provided with a radio-frequency plasma generation means and a microwave plasma generation means, by the utilization of a radio-frequency plasma in the radio-frequency plasma generation means and a microwave plasma in the microwave plasma generation means. The plasma-processing rate can thus be increased, and also electrical damage due to ions in the plasma can be reduced, thereby ensuring a high throughput and a high quality during the manufacture of semiconductor integrated circuit elements.
Claims12
A plasma-processing method comprising a step of processing samples with a radio-frequency plasma, and another step of processing the radio-frequency plasma processed samples with a microwave plasma.
A plasma-processing apparatus comprising a radio-frequency plasma generation means which generates a radio-frequency plasma for processing a sample with said radio-frequency plasma, and a microwave plasma generation means which generates a microwave plasma for processing said sample with said microwave plasma.
Dependencies are inferred from the claim text.