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US 4,561,171 AGranted
Process of gettering semiconductor devices
AssigneeShell Austria Aktiengesellschaft
InventorViktor Schlosser
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Abstract
The invention relates to a process for gettering semiconductor devices. A getter layer of amorphous or microcrystalline silicon is applied to the device. The so coated device is thermally treated and the getter layer is removed.
Claims21
Process for gettering a semiconductor device comprising the following steps:
- (1) applying a getter layer of amorphous or microcrystalline silicon onto the upper surface of the device to form a coated device;
- (2) thermally treating the coated device;
- and
- (3) removing the getter layer.
1 more element
Dependencies are inferred from the claim text.