Back to results
US 4,557,987 AGranted
Photoconductive member having barrier layer and amorphous silicon charge generation and charge transport layers
AssigneeCanon Kabushiki Kaisha
InventorsShigeru Shirai, Junichiro Kanbe, Tadaji Fukuda
Life of this patent
Estimating the term…
Abstract
A photoconductive member having a support, amorphous charge generation and charge transport layers and a barrier layer between the support and the charge generation layer. The charge generation layer contains from 0.1 to 10 atomic percent of a conduction controlling impurity. Intermediate and surface barrier layers are also employed and additional transport layers are utilized.
Claims79
A photoconductive member, comprising a support for a photoconductive member;
- a charge generation layer which generates photocarriers movable by irradiation of an electromagnetic wave;
- a charge transport layer which is disposed in relation to said charge generation layer so as to permit efficient injection of photocarriers generated in said charge generation layer into the charge transport layer and is provided with the function to transport effectively said injected photocarriers;
- and
- a first barrier layer interposed between said support and said charge generation layer;
- said charge generation layer and said charge transport layer each comprising an amorphous material containing at least one of hydrogen and halogen atoms in a matrix of silicon atoms, and said charge generation layer containing at least one of a donor and acceptor impurity to control the conduction of said charge generation layer, said impurity present in an amount of 1.times.10.sup.-1 to 10 atomic %, wherein said member is subject to generation of free carriers.
2 more elements
A photoconductive member, comprising a support for a photoconductive member;
- a surface barrier layer provided with the function to bar injection of surface charges from a free surface of said surface barrier layer facing said support and which is layered on said support;
- a charge generation layer for generation of photocarriers movable by irradiation of an electromagnetic wave, which is provided in contact with said barrier layer;
- and
- a charge transport layer which is provided in contact with said charge generation layer so that the photocarriers generated in said generation layer may efficiently be injected into the charge transport layer, said charge generation layer and said charge transport layer each comprising of an amorphous material containing at least one of hydrogen and halogen atoms in a matrix of silicon atoms, and said charge generation layer containing at least one of a donor and acceptor impurity to control the conduction characteristics of said charge generation layer in an amount of 1.times.10.sup.-1 to 10 atomic % and wherein said member is subject to formation of free carriers therein.
1 more element
Dependencies are inferred from the claim text.