# US 4,554,564 A · Semiconductor device and method of manufacturing same, as well as a pick-up device and a display device having such a semiconductor device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 4,554,564 A
- Document ID: US4554564A
- Status: Granted
- Kind: A
- Application number: 06/345,994
- Filed: 1982-02-05
- Granted: 1985-11-19
- Earliest claimed: 1978-01-27
- Assignees: U.S. Philips Corporation
- Inventors: Gerardus G. P. van Gorkom; Arthur M. E. Hoeberechts
- Web page: https://patentgrep.com/patent/US4554564A

## CPC

- H01J 37/3175: {Projection methods, i.e. transfer substantially complete pattern to substrate}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B82Y 40/00: Manufacture or treatment of nanostructures
- H01J 1/308: Semiconductor cathodes, e.g. cathodes with PN junction layers
- H01J 2237/31784: Semiconductor cathode
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

The invention relates to a method for displaying a pattern on a resist using electron lithography. In particular, a cathode device having a matrix of semiconductor cathodes generates an electron beam which exposes a resist layer. The electron beam is generated by applying control signals to selected ones of the matrix of cathodes to cause electron emission therefrom.

## Claims

### Claim 1

A method of displaying a pattern on a photoresist layer using electron lithography comprising the steps of generating an electron pattern from a matrix of cathodes formed in a semiconductor device comprising a silicon slice covered by a photoresist layer by applying control signals to selected ones of said cathodes to cause electron emission, and exposing said photoresist layer with said electron pattern, wherein each cathode of said matrix has two connection electrodes and an accelerating electrode, and wherein said cathodes providing electron emission are selected by applying a potential to their connection electrodes for generating electrons from each of said selected cathodes as an electron beam having an intensity dependent on a potential applied to said accelerating electrode of that cathode.

### Claim 2 (depends on 1)

A method according to claim 1, wherein said electron pattern generated by said matrix is reduced in scale by at least one electron lens, said electron pattern being imaged on said photoresist layer.

### Claim 3 (depends on 1, 2)

A method according to one of claims 1 or 2, wherein said control signals applied to said selected cathodes are derived from shift registers.

### Claim 4 (depends on 3)

A method according to claim 3, wherein said cathodes are arranged in an X-Y matrix having X and Y address lines, and wherein the content of said shift registers determine which X-lines and Y-lines will be driven to cause a desired pattern of cathodes to emit.

### Claim 5 (depends on 1, 2)

A method according to one of claims 1 or 2, wherein said potential of said accelerating electrodes is adjusted by shift registers in combination with digital-to-analog converters.

### Claim 6 (depends on 1, 2)

A method according to one of claims 1 or 2, wherein said control signals are derived from control electronics formed in the same semiconductor body as said matrix of cathodes.

### Claim 7 (depends on 1, 2)

A method according to one of claims 1 or 2, wherein said connection electrodes are given a potential to create avalanche multiplication in an associated p-n junction, and said accelerating electrodes associated with said connection electtodes are simultaneously given a potential for accelerating electrons.