Window structure semiconductor laser
AssigneeSharp Kabushiki Kaisha
InventorsSaburo Yamamoto, Hiroshi Hayashi, Seiki Yano
Life of this patent
Estimating the term…
Abstract
A window V-channeled substrate inner stripe semiconductor laser which includes window regions formed at both ends of a stimulated region. The stimulated region includes a crescent active layer, and each of the window regions includes a plane active layer for transferring the laser beam emitted from the stimulated region to the mirror. The window regions ensure a stable operation of the laser oscillation and a high optical power for catastrophic optical damage.
Claims7
In a window structure semiconductor laser configuration including a substrate, a current blocking layer, a cladding layer, and an active layer, said configuration comprising:
- a medial stimulated region which includes a crescent active layer;
- and
- window regions formed laterally at both ends of said stimulated region, each of said window regions including a plane active layer, said stimulated region defining a waveguide width which is narrower than a waveguide width determined by each of said window regions.
In a window structure semiconductor laser comprising:
- a substrate;
- a current blocking layer formed on said substrate, said current blocking layer having a V-shaped groove formed therein, said V-shaped groove having a medial wider section and narrower sections disposed at both ends lateral to said wider section;
- a first cladding layer formed on said current blocking layer;
- an active layer formed on said cladding layer, said active layer having a crescent portion formed at a position corresponding to said wider section of said V-shaped groove formed in said current blocking layer, and plane portions formed at positions corresponding to said narrower sections of said V-shaped groove formed in said current blocking layer;
- and
- a second cladding layer formed on said active layer.
Dependencies are inferred from the claim text.