Method for more uniformly spacing features in a lateral bipolar transistor
AssigneeGeneral Motors Corporation
InventorsJohn R. Weaver, II, Nathaniel D. McClure
Life of this patent
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Abstract
The unique initial masking step is used in a method of more predictably and uniformly spacing features on a surface of a semiconductor device by combining it with two dielectric maskants. A unique semiconductor device masking is claimed in which semiconductor device features are initially spaced by means of pitch, i.e. line and a contiguous space, instead of just a line in the initial masking.
Claims1
A lateral transistor having a precisely predictable transistor performance comprising two island-like regions of given conductivity type disposed on a semiconductor surface portion, a region of opposite conductivity type on the surface portion contiguous both island-like regions and providing a sole surface portion spacing the two island-like regions, a single step in the opposite conductivity type spacing region surface generally equidistant between the two island-like regions, a discrete electrical contact on each of said regions by which transistor operating voltages can be respectively applied to these regions, and an identical doping level in parts of the opposite conductivity type region that are contiguous to and on opposite sides of the step, representative of the use of pitch to initially delineate the two island-like regions on said semiconductor surface portion.
Dependencies are inferred from the claim text.