Window structure for passivating solar cells based on gallium arsenide
AssigneeUniversity of Delaware
InventorAllen M. Barnett
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Abstract
Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich.
Claims4
A gallium arsenide photovoltaic device with a layered structure having a window layer of gallium arsenide phosphide graded from an arsenic-rich portion in contact with the adjacent photovoltaically active gallium arsenide layer to a phosphorus-rich portion remote from the photovoltaically active layer.
A photovoltaic solar cell having a layered structure comprising in order, a transparent electrical contact, an optically transparent window layer, a gallium arsenide absorber-generator layer, a gallium arsenide collector-converter layer, wherein the absorber-generator and the collector-converter layers respectively are doped to provide opposite conductivity types, and an optically opaque electrically conductive layer, wherein the optically transparent window layer is gallium arsenide phosphide graded from a phosphorus-rich portion in contact with transparent electrical contact and an arsenic-rich portion in contact with the gallium arsenide absorber-generator layer.
Dependencies are inferred from the claim text.