Photo and radiation-sensitive organopolymeric material

#This invention relates to a photo and radiation-sensitive organopolymeric material having a high sensitivity to light and radiation, and particularly to a photo and radiation-sensitive organopolymeric material having a good resistance to dry etching.

#In the fabrication of electronic parts such as semiconductor devices, integrated circuits, etc. a fine patterning technique based on photoetching is used.

#For example, a photo-resist layer is formed on a silicon single crystal wafer, etc. by spin coating, and a mask of desired pattern is placed thereon, followed by light exposure, development, rinsing, etc. to form an image. Then, lines or windows having a width of a few .mu.m are formed by etching. In the foregoing fine patterning technique, the precision of products depends mostly on the properties of a photoresist used, for example, resolution and photosensitivity on a substrate, adhesion to the substrate or resistance to etching.

#FIG. 1 is a diagram showing a resistance to an oxygen plasma of a resist film made from the present photo and radiation-sensitive organopolymeric material, where a relationship between the oxygen plasma etching time and the reduction in thickness of the resist film is given.

#FIG. 2 is a diagram showing a thermal decomposition curve of the present organopolymeric material as used in FIG. 1, where the reduction in weight is plotted against the heating temperature.

#The present invention will be described in detail below, referring to Preparation Examples and Examples.

#16.2 g of ethylmethyldiethoxysilane, 2.43 g of magnesium and 10 ml of tetrahydrofuran were charged into a 500-ml, three-necked flask provided with a stirrer, a cooler and a dropping funnel and stirred under a nitrogen gas stream, while 100 ml of a tetrahydrofuran solution containing 11,8 g of p-dibromobenzene was dropwise added thereto from the dropping funnel over about 3 hours. After the dropwise addition, the mixture was further stirred and refluxed for about 5 hours. After the refluxing, the resulting polymer was separated by filtration, and then the solvent was removed therefrom by distillation. The residues were then subjected to distillation under reduced pressure, whereby 10.5 g of p-bis(ethylmethylethoxysilyl)benzene was obtained (yield: 68%, boiling point: 122.degree.-125.degree. C./3 mmHg).

#NMR spectrum (CDCl.sub.3) .delta. (ppm): 0.42(s), 0.86-1.08(m), 1.26(t), 3.74(g), 7.56(s)