VLSI chemical reactor

Abstract

A VLSI chemical reactor includes a fluid flow guide spaced from the corresponding substrate in the form of a wafer for significantly reducing contamination in the processing of semiconductor wafers. Processing chemicals are introduced in a continuous process through a central tube and through the fluid flow guide which is substantially planar and which is parallel to the surface of the wafer. A predetermined gap is maintained between the guide and the wafer such that fluid is maintained in the gap at all times critical in the processing of the wafer. In one embodiment, the guide is optically transparent at predetermined portions to permit monitoring of the chemical reaction taking place on the surface of the wafer to permit control of fluid flow to the wafer. Because of the uniform gap, the fluid guide insures a constant thickness and composition of the opticalpath, and thus more accurate measurements. All drying steps are done directly and include the steps of replacing the working fluid with an inert gas and increasing the speed of rotation of either the wafer or the guide to remove any liquid or particulate matter by centrifugal force. Bubble reduction and fluid mixing apparatus, including different fluid guide configurations, gas relief orifices and offset rotational axes, are also described. Moreover, in one embodiment orthogonal and orbital vibrating arrangements are used in lieu of rotating motion.

Dependencies are inferred from the claim text.