Amorphous silicon semiconductor and process for same
AssigneeKanegafuchi Kagaku Kogyo Kabushiki Kaisha
InventorsKazunori Tsuge, Yoshihisa Tawada, Yoshihiro Hamakawa
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Abstract
A process for preparing an amorphous silicon semiconductor comprising steps of plasma decomposing silicon compounds and carrying out photolysis of the silicon compounds. According to the process, the growth rate of the semiconductor is greatly increased. The obtained amorphous silicon semiconductor has excellent electrical and optical properties and is useful as a photovoltaic element.
Claims8
A process for preparing an amorphous silicon semiconductor by treating a silicon compound under conditions which will cause the silicon compound to undergo photolysis and plasma decomposition, said process comprising:
- (a) irradiating the silicon compound with light of sufficient wave length and intensity to decompose the silicon compound and
- (b) subjecting the silicon compound to conditions of glow discharge.
Dependencies are inferred from the claim text.