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US 4,544,418 AGranted
Process for high temperature surface reactions in semiconductor material
OwnerJames F. Gibbonsinventor
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Abstract
A process for controlled surface reactions in semiconductor material which includes rapidly heating the material to a high temperature, maintaining the temperature for a short time and cooling the material all while the surface is exposed to a substance which reacts at the surface.
Claims16
A process for forming on a substrate one or more very thin films, and for controlling the uniformity of the thickness of said very thin films in a predetermined atmosphere having selected reactants comprising the steps of:
- rapidly heating a substrate and linearly raising the temperature of said atmosphere at a first rate to a predetermined temperature;
- maintaining said atmosphere at said elevated temperature for a selected time measured in seconds;
- and
- cooling said substrate in the presence of selected reactants to provide a linear decrease of temperature at a second rate to a relatively low temperature.
1 more element
Dependencies are inferred from the claim text.