Transient capless annealing process for the activation of ion implanted compound semiconductors

A method for activating and caplessly annealing a plurality of implanted gallium arsenide wafers disposed within an enclosed container on a volume production basis comprising the steps of:

• heating dry crushed sacrificial gallium arsenide disposed within the enclosed container to a first temperature;
• flowing hydrogen over said dry crushed sacrificial gallium arsenide to provide a gas mixture including gallium, arsenic and hydrogen;
• flowing said gas mixture over said gallium arsenide wafers to be activated;
• and
• heating said gallium arsenide wafers to be activated to a second temperature, with the first temperature in greater than the second temperature to maintain a gallium and arsenic overpressure encompassing the wafers, said overpressure exceeding the decompositional pressure of the elements from the wafer and, terminating heating of both the sacrificial gallium arsenide and the wafer while maintaining flowing of the gas mixture over the wafer until the wafers are cooled.