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AssigneeThe United States of America as represented by the Administrator of the National Aeronautics and Space Administration
InventorsGeorge E. Alcorn, Charles Z. Leinkram, Olatunji Okunola
Estimating the term…
A gallium arsenide photo-responsive device (40) is provided with an intermediate, transparent layer (28) of refractory metal or alkaline earth metal forming a tenacious bond between a non-hydroscopic oxide layer (24) and a noble metal Schottky barrier layer (30). The device has a gallium arsenide substrate with a predetermined type conductivity and a gallium arsenide epitaxial layer (16) with the same type conductivity but a lower charge carrier concentration grown on the substrate. The oxide layer (24) is formed to cover the epitaxial layer (16) and the transparent metal layer (28) followed by the noble metal layer (30) are deposited upon the oxide layer. An interdigitated ohmic contact (32) is then formed upon the noble metal layer.
A photo-responsive device, comprising:
A method of making a photo-responsive device, comprising the steps of:
The method of claim 9 wherein said refractory metal layer is deposited to a thickness of not more than forty angstrom units.
Dependencies are inferred from the claim text.