Method of making a non-single-crystalline semi-conductor layer on a substrate

A multi-layer semiconductor manufacturing method which employs a plurality n of sequentially arranged, adjacent reaction chambers C.sub.1, C.sub.2 . . . C.sub.n, a plurality (n-1) of normally closed shutter means G.sub.12, G.sub.23 . . . G.sub.(n-1)n separating the reaction chamber C.sub.1 and C.sub.2, C.sub.2 and C.sub.3 . . . C.sub.(n-1) and C.sub.n, respectively, an inserting chamber C.sub.0 adjacent the reaction chamber C.sub.1 and separated therefrom by a shutter means G.sub.01 and a taking-out chamber C.sub.n+1 adjacent the reaction chamber C.sub.n and separated therefrom by a shutter means G.sub.n(n+1), the reaction chambers C.sub.1 to C.sub.n being each provided with a gas inlet and a gas outlet, the inserting chamber C.sub.0 and the taking-out chamber C.sub.n+1 being each provided with another gas outlet, the inserting chamber C.sub.0 and the reaction chamber C.sub.1, C.sub.2 . . . C.sub.n having positioned therein (n+1) substrates B.sub.n+1, B.sub.n . . . B.sub.2, B.sub.1 respectively, the method comprising the steps of:

• depositing n semiconductors on the substrates B.sub.n, B.sub.n-1 . . . B.sub.1 to form thereon n semiconductor layers L.sub.1, L.sub.2 . . . L.sub.n, respectively, by introducing at least n semiconductor compound gases into the reaction chambers C.sub.1, C.sub.2 . . . C.sub.n through the gas inlets thereof in such a state that gases in the reaction chambers C.sub.1, C.sub.2 . . . C.sub.n are exhausted therefrom through the gas outlets thereof and by applying n ionizing electromagnetic fields to the semiconductor compound gases to ionize them into semiconductor compound gas plasmas while at the same time passing semiconductor gas plasmas into the reaction chambers C.sub.1, C.sub.2 . . . C.sub.n by discharging therefrom the gases, respectively;
• displacing the shutter means G.sub.01, G.sub.12, G.sub.23 . . . G.sub.(n-1)n, G.sub.n(n+1) and moving the substrates B.sub.n+1, B.sub.n . . . B.sub.2, B.sub.1 from the inserting chamber C.sub.0 and the reaction chambers C.sub.1, C.sub.2 . . . C.sub.n to the reaction chambers C.sub.1, C.sub.2 . . . C.sub.n and taking out chamber C.sub.n+1, respectively, while at the same time evacuating entirely the inserting chamber C.sub.0, the reaction chamber C.sub.1 to C.sub.n and the taking-out chamber C.sub.n+1 or passing therethrough only carrier gases and then closing the shutter means G.sub.01, G.sub.12 . . . G.sub.n(n+1) ;
• and
• positioning a substrate B.sub.n+2 in the inserting chamber C.sub.0 while at the same time taking out the substrate B.sub.1 from the taking-out chamber C.sub.n+1, whereby to fabricate the multi-layer semiconductor having the n semiconductor layers L.sub.1, L.sub.2 . . . L.sub.n sequentially laminated in this order.