Process for producing single crystalline semiconductor island on insulator
AssigneeFujitsu Limited
InventorRyoichi Mukai
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Abstract
A process for producing a single crystalline semiconductor island on an insulator, comprising the steps of providing a semiconductor island comprising a nonmonocrystalline semiconductor on an insulator; forming an energy-absorbing cap layer which coats at least the upper and side surfaces of the semiconductor island; irradiating the energy-absorbing cap layer with an energy beam; and melting and transforming the coated nonmonocrystalline semiconductor into a single crystalline semiconductor with the heat generated in the energy-absorbing cap layer.
Claims6
A process of producing a single crystalline semiconductor island on an insulator, comprising the steps of:
- forming a semiconductor island of a nonmonocrystalline semiconductor, having upper and side surfaces, on an insulator;
- forming an energy-absorbing cap layer which coats at least said upper and side surfaces of said semiconductor island, said energy-absorbing cap layer being capable of absorbing radiant energy and generating heat enough to melt said semiconductor island;
- and
- irradiating said energy-absorbing cap layer with an energy beam of radiant energy sufficient to melt and transform said coated nonmonocrystalline semiconductor into a single crystalline semiconductor by the heat generated in said energy-absorbing cap layer.
A process for producing single crystalline semiconductor islands on an insulator, comprising the steps of:
- (a) forming an insulator layer on a substrate;
- (b) forming a first wetting layer on said insulator layer;
- (c) forming a semiconductor island of a nonmonocrystalline semiconductor on said wetting layer;
- (d) coating said semiconductor island with a separating layer;
- (e) forming a second wetting layer on said separating layer;
- (f) forming an energy-absorbing layer on said second wetting layer;
- (g) forming a shape-stabilizing layer on said energy-absorbing layer;
- (h) forming an antireflecting layer on said shape-stabilizing layer;
- (i) irradiating said substrate and layers formed thereon with a laser beam, thereby generating heat in said energy-absorbing layer sufficient to melt and transform said nonmonocrystalline semiconductor of said semiconductor island into a single crystalline semiconductor by said generated heat;
- and
- (j) removing all layers formed on said semiconductor island.
Dependencies are inferred from the claim text.