Apparatus for molecular beam epitaxy
AssigneeHitachi, Ltd.
InventorsKazuo Sato, Sumio Yamaguchi, Shigeo Kato, Yasuhide Matsumura, Muneo Mizumoto, Sumio Okuno, Naoyuki Tamura
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Abstract
An apparatus for molecular beam epitaxy according to the present invention is so constructed that a substrate is introduced into a vacuum vessel with a substrate surface for epitaxial growth facing in the direction of gravity, and that the substrate is conveyed to and transferred into vacuum chambers for performing processes necessary for the epitaxial growth, with the substrate surface maintained in the direction of gravity and without directly touching the substrate surface.
Claims2
An apparatus for molecular beam epitaxy comprising means to introduce a substrate into said apparatus with a substrate surface for epitaxial growth facing in a gravitational direction, processing chamber means to perform processes necessary for the epitaxial growth of the substrate surface by a molecular beam in ultrahigh vacuum, means capable of conveying the introduced substrate into said processing chamber means in the state in which the substrate surface is maintained in the gravitational direction, and means capable of transferring the introduced substrate to the conveyance means and transferring it between said conveyance means and said processing chamber means in the state in which the substrate surface is maintained in the gravitational direction, a thin film crystal being grown on the substrate surface by the molecular beam epitaxy, and means for rearranging the substrate surface of the substrate conveyed into said processing chamber means in a substantially vertical direction and setting the substrate surface toward an irradiation position of the molecular beam.
Dependencies are inferred from the claim text.