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US 4,542,396 AGranted
Trapped charge bidirectional power FET
AssigneeEaton Corporation
InventorsHerman P. Schutten, James A. Benjamin, Robert W. Lade
Life of this patent
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Abstract
Lateral FET structure is disclosed for bidirectional power switching, including AC application. A plurality of integrated FETs each have left and right source regions and left and right channel regions with a common drift region therebetween, and conduct current in either direction according to the polarity of main terminals. Gating means includes gate electrode means disposed proximate and insulated from the channel regions and adapted for storing trapped charge tunneled through an insulated layer from a charging electrode.
Claims20
A bidirectional power FET, comprising:
- a first source region of one conductivity type semiconductor material;
- a first channel region of opposite conductivity type semiconductor material forming a junction with said first source region;
- a single drift region of said one conductivity type semiconductor material forming another junction with said first channel region;
- a second channel region of said opposite conductivity type semiconductor material forming a junction with said drift region;
- a second source region of said one conductivity type semiconductor material forming a junction with said second channel region;
- gating means including gate electrode means disposed proximate said first and second channel regions and adapted for storing trapped charge for producing electric fields of sufficient intensity to invert the conductivity type in said first and second channel regions;
- whereby upon application of voltage of either polarity to said first and second source regions, electric current can flow in a respective corresponding direction between them, under control of said gating means;
- said single drift region supporting OFF state blocking voltage in both directions.
5 more elements
Dependencies are inferred from the claim text.