Non-volatile flip-flop with a static resetting
AssigneeSociete pour l'Etude et la Fabrication de Circuits Integres Speciaux
InventorsJean-Michel Brice, Patrick Maillart
Life of this patent
Estimating the term…
Abstract
A flip-flop further comprising two branches with MNOS elements serially connected with P channel MOS transistors for permitting a non-volatile storing of the informations comprised in the flip-flop at a chosen storing time. The memorization of the state of the flip-flop can be made in a single cycle by acting on the control signal applied to the gate of the P channel transistors and on the supply voltage of the device. In the same way, the resetting can be made in a single cycle.
Claims4
A non-volatile storage device comprising:
- a MOS flip-flop circuit having complementary first and second outputs, a reference terminal and a supply terminal;
- first and second storage branches each comprising a series circuit of a non-volatile storage element and a switching element, said non-volatile storage element comprising a MOS transistor having an electrically programmable threshold voltage;
- the storage element of said first storage branch connected at one end of said first storage branch to said first output of said flip-flop circuit and having a control electrode connected to said second output of said flip-flop circuit;
- the storage element of said second storage branch connected at one end of said second storage branch to said second output of said flip-flop circuit and having a control terminal connected to said first output of said flip-flop circuit;
- and,
- said switching elements of said storage branches being connected to said supply terminal at an other end of each said storage branches and having a control electrode for controlling conduction or blocking thereof.
A non-volatile storage device comprising:
- a MOS flip-flop circuit having complementary first and second outputs, a reference terminal and a supply terminal;
- first and second storage branches each comprising a series circuit of a non-volatile storage element and a switching element, said non-volatile storage element comprising a MOS transistor having an electrically programmable threshold voltage;
- the storage element of said first storage branch connected at one end of said first storage branch to said first output of said flip-flop circuit and having a control electrode connected to said second output of said flip-flop circuit;
- the storage element of said second storage branch connected at one end of said second storage branch to said second output of said flip-flop circuit and having a control terminal connected to said first output of said flip-flop circuit;
- and,
- said switching elements of said storage branches being connected to a writing line at an other end of each said storage branches and each having a control electrode for controlling conduction or blocking thereof.
Dependencies are inferred from the claim text.