Copper plating bath having increased plating rate, and method
AssigneeInternational Business Machines Corporation
InventorsPerminder S. Bindra, Allan P. David, Raymond T. Galasco, Charles E. Gasdik, David N. Light, Paul B. Pickar
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Abstract
A copper plating bath containing a sulfur-containing anion other than sulfate anion and/or a selenium-containing anion other than a selenate anion and/or a tellurium-containing anion other than a tellurate anion in an amount sufficient to increase the plating rate, and method for electroplating copper onto a substrate with the plating bath.
Claims16
An acidic-electrolytic copper plating bath comprising a cupric ion source, an acid, and sulfur-containing anions other than sulfate ions and wherein said sulfur-containing anions are from an inorganic material in an amount sufficient to increase the plating rate and being present in an amount of about 10.sup.-6 to about 10.sup.-3 M, and wherein the acid is added in an amount sufficient that the ion strength of the bath is about 5 to about 9 M.
A method for electroplating copper onto a substrate which comprises providing said substrate and an electrode in contact with an acidic-electrolytic copper plating bath comprising a cupric ion source, an acid in an amount sufficient that the ion strength of the bath is about 5 to about 9 M, and sulfur-containing anions other than sulfate ions, wherein said sulfur-containing ions are from an inorganic material in an amount sufficient to increase the plating rate and being present in an amount of about 10.sup.-6 to about 10.sup.-3 M;
- and passing an electric current through said plating bath in a direction to make said substrate a cathode.
Dependencies are inferred from the claim text.