InP:Te Protective layer process for reducing substrate dissociation
AssigneeThe United States of America as represented by the Secretary of the Air Force
InventorFrank Z. Hawrylo
Life of this patent
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Abstract
In order to prevent the formation of indium droplets upon the surface of an indium phosphide wafer during liquid phase epitaxial growth, a doped protective layer is deposited by LPE upon said substrate before epitaxial growth of additional layers occurs. The doped protective layer is composed of indium phosphide doped with tellurium to a concentration of about high 10.sup.18 to low 10.sup.19.
Claims6
An improved method of fabricating a semiconductor device having therein a plurality of layers, said semiconductor device having a substrate upon which said layers are operably deposited, said substrate consisting of Group III-V elements, wherein the improvement comprises the steps of:
- forming a growth melt of Group III, V and VI elements by liquid phase epitaxy;
- homogenizing said growth melt;
- forming a Group III wipe solution;
- wiping said substrate with said wipe solution;
- placing said substrate after being wiped in contact with said growth melt;
- depositing on said substrate a doped protective layer from said growth melt for preventing the dissociation of said substrate;
- removing from said growth melt said substrate with said doped protective layer thereon;
- and
- removing said substrate having said protective layer thereon from a growth furnace whereby said protective layer allows surface preparation for forming said semiconductor device thereafter.
Dependencies are inferred from the claim text.