Method of forming ohmic contact on GaAs by Ge film and implanting impurity ions therethrough
AssigneeOki Electric Industry Co., Ltd.
InventorsToshio Nonaka, Hiroshi Nakamura, Choho Yamagishi
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a GaAs compound semiconductor device is disclosed. The method comprises steps of applying a Ge film on an n+ region for forming ohmic electrode thereon, injecting impurity ion into the Ge film with high concentration, applying metal of high melting point overall surface of the semiconductor body to an annealing treatment after final ion implantation step.
Claims8
In a method of manufacturing a GaAs compound semiconductor device including steps of forming a plurality of semiconductor elements in a GaAs compound semiconductor body by impurity diffusion or ion implantation, forming ohmic electrodes on these semiconductor elements, and forming connection wiring among these elements, the improvement comprising the steps of applying a Ge film on an n+ implanted region for forming ohmic electrodes thereon, implanting impurity ions into the Ge film with a concentration higher than that of the implanted region, applying to the overall surface of the semiconductor body, including the Ge film, a metal comprising a W-AI alloy having a sufficiently high melting point that the Ge film becomes an n++ Ge film and the n+ implanted region of the GaAs substrate is activated by subsequent high temperature annealing treatment, and subjecting the semiconductor body to an annealing treatment after the final ion implantation step.
In a method of manufacturing a GaAs compound semiconductor device including steps of forming a plurality of semiconductor elements in a GaAs compound semiconductor body by impurity diffusion or ion implantation, forming ohmic electrodes on these semiconductor elements, and forming connection wiring among these elements, the improvement comprising the steps of applying a Ge film on an n+ implanted region for forming ohmic electrodes thereon, implanting impurity ions into the Ge film with a concentration higher than that of the implanted region, then implanting a high concentration of impurity ion into the region of the semiconductor body underneath the Ge film to form an n++ region, applying to the overall surface of the semiconductor body, including the Ge film, a metal comprising a W-Al alloy having a sufficiently high melting point that the Ge film becomes an n++ Ge film and the n+ implanted region of the GaAs substrate is activated by subsequent high temperature annealing treatment, and subjecting the semiconductor body to an annealing treatment after the final ion implantation step.
In a method of manufacturing a GaAs compound semiconductor device including steps of forming a plurality of semiconductor elements in a GaAs compound semiconductor body by impurity diffusion or ion implantation, forming ohmic electrodes on these semiconductor elements, and forming connection wiring among these elements, the improvement comprising the steps of applying a Ge film on an n+ implanted region for forming ohmic electrodes thereon, implanting impurity ions into the Ge film with a concentration higher than that of the implanted region, applying to the overall surface of the semiconductor body, including the Ge film, a metal having so high a melting point that the Ge film becomes n++ Ge film and the n+ implanted region of the GaAs substrate is activated by subsequent high temperature annealing treatment, and subjecting the semiconductor body to an annealing treatment when the metal having a high melting point is applied onto the overall surface of the semiconductor body including the Ge film.
Dependencies are inferred from the claim text.