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US 4,539,743 AGranted
Production of semiconductor structures with buried resistive or conductive regions by controlled ion bombardment and heat treatment
AssigneeAT&T Bell Laboratories
InventorsPhilip J. Anthony, Robert L. Hartman, Louis A. Koszi, Bertram Schwartz
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Abstract
The property of Group III-V compound materials, whereby ion bombarded material becomes highly resistive but recovers its original low resistivity by annealing at a temperature which is dopant and material dependant, is utilized to fabricate integrated circuits which include buried semiconductor interconnections or bus bars between devices.
Claims11
A method of manufacturing a device comprising the steps of
- (a) providing a multi-layered Group III-V compound structure which includes a first layer having a first dopant and a second layer having a second dopant,
- (b) ion bombarding said layers at a dose and energy so that said layers become highly resistive, the resistivity of said first layer remaining high when heated to a first temperature and thereafter decreasing to a relatively low resistivity, and the resistivity of said second layer remaining high when heated to a second temperature, different from said first temperature, and thereafter decreasing to a relatively low resistivity, and
- (c) simultaneously heating said layers at a temperature between said first and second temperatures so that one of said layers becomes lowly resistive while the other of said layers remains highly resistive.
A method of manufacturing an integrated circuit comprising the steps of
- (a) providing a multi-layered Group III-V compound structure which includes a first layer having a first dopant and a second layer having a second dopant,
- (b) ion bombarding said layers at a dose and energy so that said layers become highly resistive, the resistivity of said first layer remaining high when heated to a first temperature and thereafter decreasing to a relatively low resistivity, and the resistivity of said second layer remaining high when heated to a second temperature, different from said first temperature, and thereafter decreasing to a relatively low resistivity,
- (c) simultaneously heating said layers at a temperature between said first and second temperatures so that one of said layers becomes lowly resistive while the other of said layers remains highly resistive, and
- (d) forming at least two separated devices in said structure so that said highly resistive layer electrically isolates said devices from one another and said lowly resistive layer forms a conductive path between said devices.
1 more element
Dependencies are inferred from the claim text.