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US 4,539,742 AGranted
Semiconductor device and method for manufacturing the same
AssigneeTokyo Shibaura Denki Kabushiki Kaisha
InventorsKoichi Kanzaki, Minoru Taguchi
Life of this patent
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Abstract
A semiconductor device wherein collector connecting wiring made of for example n.sup.+ -type polycrystalline silicon layer is formed by an anisotropic etching which simultaneously engrave a groove in a semiconductor substrate. A collector layer is formed on a non-etched projection, while base contact hole is formed in the lower portion of the groove. Therefore, the base contact hole is not contacted with collector layer, thus preventing the flow of a leakage current and short-circuiting therebetween.
Claims8
A method for manufacturing a semiconductor device, comprising the steps of:
- (a) forming a first impurity region of a second conductivity type in a semiconductor layer of a first conductivity type which is formed above a semiconductor substrate;
- (b) selectively forming a conductive film of said first conductivity type on a portion of said first impurity region, said film being covered by a first insulating layer;
- (c) forming a groove by anistropically etching portions of said first impurity region using said first insulating layer as a mask, thereby defining a projecting region supporting said conductive film and said first insulating layer and having side surfaces extending below said conductive film;
- (d) forming a second insulating layer covering the grooved surface formed in step (c);
- (e) forming a second impurity region of said second conductivity type at the bottom of said groove;
- (f) selectively etching said second insulating layer to leave said second insulating layer on the side surfaces of said groove defining said projecting region;
- and
- (g) depositing a wiring layer electrically connected to said second impurity region.
5 more elements
Dependencies are inferred from the claim text.