Optically excitable luminescent sensor elements

A sensor element adaptable for measurement of a physical parameter and formed of a crystalline material, comprising:

• a first semiconductor layer composed of GaAs for emitting luminescence spectra upon excitation by light spectra and the influence of said physical parameter;
• second and third semiconductor layers formed of Al.sub.x Ga.sub.1-x As and sandwiching said first semiconductor layer, each said second and third semiconductor layer having low absorption for the light excitation and light emission of said first layer, the respective lattice constants of the second and third semiconductor layers substantially coinciding with the lattice constant of said first semiconductor layer;
• where 0<x<0.6;
• a semiconductor substrate formed of GaAs supporting said first, second and third semiconductor layers;
• and
• said first, second and third semiconductor layers being of the same conductivity type.

A sensor element in a fiber optic sensor system, adaptable for the measurement of one of temperature and pressure and formed of a crystalline material, comprising:

• a first semiconductor layer composed of Al.sub.y Ga.sub.1-y As for emitting luminescence spectra upon excitation by light spectra and the influence of one of said temperature and pressure, and having a dopant concentration between 10.sup.15 to 10.sup.18 cm.sup.-3 ;
• a second semiconductor layer composed of Al.sub.z Ga.sub.1-z As formed over said first layer;
• a third semiconductor layer composed of Al.sub.x Ga.sub.1-x As formed under said first layer;
• said second and third semiconductor layers each having low absorption for the light excitation and light emission of said first layer, the respective lattice constants of the second and third semiconductor layers substantially coinciding with the lattice constants of said first semiconductor layer;
• where 0<x<0.6, 0<y<0.3, and 0<z<0.6;
• and
• said first, second and third semiconductor layers being of the same conductivity type.

A sensor element in a fiber optic sensor system, adaptable for the measurement of one of temperature and pressure and formed of a crystalline material, comprising:

• a first semiconductor layer composed of GaAs for emitting said luminescence spectra upon excitation by light spectra and the influence of one of said temperature and pressure;
• second and third semiconductor layers formed of Al.sub.x Ga.sub.1-x As and sandwiching said first semiconductor layer, each said second and third semiconductor layer having low absorption for the light excitation and light emission of said first layer, the respective lattice constants of the second and third semiconductor layers substantially coinciding with the lattice constants of said first semiconductor layer;
• where 0<x<0.6;
• a semiconductor substrate formed of GaAs supporting said first, second and third semiconductor layers;
• and
• said first, second and third semiconductor layers being of the same conductivity type.

A sensor element formed of a crystalline material and adaptable for measuring a physical parameter such as one of temperature and pressure, comprising:

• at least three semiconductor layers;
• a first semiconductor layer emitting luminescence upon excitation by light spectra and a change in said physical parameter, and at least one first dopant material providing shallow energy levels and with at least one second dopant material providing recombination centers, the concentration of said first dopant being between 10.sup.15 to 10.sup.18 cm.sup.-3 ;
• at least second and third layers of semiconductor material surrounding said first layer and having low absorption for the light excitation and light emission of said first layer, the respective lattice constants of said second and third semiconductor layers substantially coinciding with the lattice constant of said first layer;
• and
• each of said at least three semiconductor layers having the same type of majority charge carriers.

A sensor element adaptable for measurement of a physical parameter and formed of a crystalline material, comprising:

• a first semiconductor layer composed of Al.sub.y Ga.sub.1-y As for emitting luminescence spectra upon excitation by light spectra and the influence of said physical parameter, and having a dopant concentration between 10.sup.15 to 10.sup.18 cm.sup.-3 ;
• a second semiconductor layer composed of Al.sub.z Ga.sub.1-z As formed over said first layer;
• a third semiconductor layer composed of Al.sub.x Ga.sub.1-x As formed under said first layer;
• where 0<x<0.6, 0<y<0.3 and 0<z<0.6;
• and
• said first, second and third layers being of the same conductivity type.

A sensor element adaptable for measurement of a physical parameter and formed of a crystalline material, comprising:

• a first semiconductor layer composed of GaAs for emitting luminescence spectra upon excitation by light spectra and the influence of said physical parameter;
• second and third semiconductor layers formed of Al.sub.x Ga.sub.1-x As and sandwiching said first semiconductor layer;
• where 0<x<0.6;
• a semiconductor substrate formed of GaAs supporting said first, second and third semiconductor layers;
• and
• said first, second and third semiconductor layers being of the same conductivity type.