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US 4,539,221 AGranted
Process for the chemical vapor deposition of oxidic particles
AssigneeWacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
InventorsHerbert Jacob, Robert Rurlander, Anton Schnegg
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Abstract
A process for the chemical vapor deposition of oxidic particles by oxidat of halides or halide mixtures wherein dinitrogen monoxide is used as the oxidizing agent. The reaction is carried out at comparatively low temperatures of between 900.degree. and 1150.degree. C., but results in high yields.
Claims4
In a process for the chemical vapor deposition of oxidic particles by oxidation of a gas current impinged upon by a halide or a halide mixture in a substantially homogeneous vapor phase reaction, the improvement comprising the steps of:
- oxidizing said gas current by using dinitrogen monoxide as the oxidizing agent and reacting the same with a halide-containing gas current in a heating zone having a temperature between 900.degree. and 1150.degree. C.
Dependencies are inferred from the claim text.