Indium-antimony complex crystal semiconductor and process for production thereof
AssigneeAsahi Kasei Kogyo Kabushiki Kaisha
InventorsKeiji Kuboyama, Takeki Matsui, Takeo Kimura
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Abstract
An indium-antimony complex crystalline semiconductor consisting essentially of crystals of an indium-antimony compound and crystals of indium alone is disclosed. The atomic ratio of the total indium content to the antimony content in the semiconductor is in the range of from 1.1/1 to 1.7/1. A process for producing such semiconductor is also disclosed. In the process, the vapors of indium and antimony are deposited on a substrate in such a manner that the arrival rate ratio of indium to antimony is controlled to be within the range of from 1.1/1 to 1.7/1.
Claims4
An indium-antimony complex crystalline semiconductor consisting essentially of crystals of an indium-antimony compound and crystals of indium alone, wherein the atomic ratio of the total indium content to the antimony content is in the range of from 1.1/1 to 1.7/1.
Dependencies are inferred from the claim text.