Amorphous film of transition element-silicon compound
AssigneeFutaba Denshi Kogyo K.K.
InventorsKiyoshi Morimoto, Toshinori Takagi
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Abstract
An amorphous film formed of a transition element-silicon compound which has excellent electric and optical characteristics is disclosed. The compound is amorphous and has a Si content of 60-85 at. %.
Claims6
An amorphous film composed of a transition element-silicon compound which consists essentially of iron and silicon, wherein the content of said silicon is within the range of 60 atom percent through 85 atom percent, whereby said amorphous film contains a .zeta.-FeSi.sub.2 phase that is semiconductive.
An amorphous film composed of a transition element-silicon compound which consists essentially of silicon and one or more 3d-transition elements selected from the group consisting of Co, Cr, Mn, Ni or Ti, wherein the content of silicon is within the range of 60 atom percent through 85 atom percent, whereby said transition element-silicon compound has a tetragonal crystal structure and is semiconductive.
Dependencies are inferred from the claim text.