Forming platinum contacts to in-based group III-V compound devices
AssigneeAT&T Bell Laboratories
InventorsIrfan Camlibel, Aland K. Chin, Brymer H. Chin, Christie L. Zipfel
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Abstract
Electrical contacts with low specific-contact resistance to In-based Group III-V compound semiconductors (e.g., p-InGaAsP) are formed by electron beam depositing a thin Pt layer directly on the semiconductor and sintering at about 450.degree.-525.degree. C. for about 5-30 minutes. Light emitting diodes without dark spot defects can be fabricated using this technique.
Claims11
A method of fabricating a device, which includes forming a low specific-contact resistance electrical contact on a layer of an In-based, Group III-V compound semiconductor, comprising the steps of:
- (a) depositing a thin layer of essentially only Pt on said In-based layer, and
- (b) sintering said layers at a temperature of about 450.degree.-525.degree. C. for a time of about 5-30 minutes in a reducing ambient.
A method of fabricating a device, which includes a low specific-contact resistance electrical contact on a layer of an In-based, Group III-V compound semiconductor, comprising the steps of:
- (a) epitaxially growing said In-based layer as a p-type semiconductor composition selected from the group consisting of InGaAsP and InGaAs,
- (b) electron beam depositing a thin layer of essentially only Pt to a thickness of about 100 to 2000 .ANG. on a restricted portion of said In-based layer through a shadow mask,
- (c) capping said In-based layer to prevent the out-diffusion of volatile elements therefrom, and
- (d) sintering said layers at a temperature of about 450.degree.-525.degree. C. for a time of about 5-30 minutes in a reducing ambient.
Dependencies are inferred from the claim text.