Back to results
US 4,536,943 AGranted
Method of manufacturing a FET
AssigneeTokyo Shibaura Denki Kabushiki Kaisha
InventorMasakazu Kakumu
Life of this patent
Estimating the term…
Abstract
In a method of forming electrodes or wiring structures in a semiconductor device, metal and metal silicide are used for electrodes and lead wires, impurities are doped into the interface of a semiconductor substrate from the surface by gas diffusion or solid diffusion irrespective of the thickness, and in the case where the base material is an insulating material, the impurities are not doped into the semiconductor region side by self-alignment.
Claims4
A method of manufacturing an FET comprising:
- forming an insulating film on the surface of a semiconductor substrate;
- removing a portion of said insulating film from said substrate surface to form an exposed portion of said substrate;
- forming a conductive film made up of a material selected from the group consisting of tungsten silicide (WSi.sub.2), titanium silicide (TiSi.sub.2), and platinum silicide (PtSi), on said insulating film and on said exposed portion, by simultaneously evaporating metal and silicon onto said exposed portion and insulating film;
- introducing impurities into the surface of said substrate from outside the substrate through said conductive film so as to form an ohmic contact region at the contacting portion of said substrate and said conductive film;
- and
- forming a source semiconductor region and a drain semiconductor region of said FET in said substrate by ion-implanting said substrate.
3 more elements
A method of manufacturing an FET comprising:
- forming an insulating film on the surface of a semiconductor substrate;
- removing a portion of said insulating film from said substrate surface;
- evaporating silicon on said insulating film and on the portion of said substrate from which said insulating film was removed so as to form a polysilicon layer;
- forming a conductive film made up of a material selected from the group consisting of tungsten silicon (WSi.sub.2), titanium silicide (TiSi.sub.2), and platinum silicide (PtSi) on said polysilicon layer, by simultaneously evaporating metal and silicon on said polysilicon layer;
- and
- introducing impurities into the surface of said substrate from outside the substrate through said conductive film so as to form an ohmic contact region at the contacting portion of said substrate and said polysilicon layer.
3 more elements
A method of manufacturing a MOSFET comprising:
- forming an insulating film on a first part of the surface of a semiconductor substrate;
- forming a gate oxide film on a second part of the surface of said semiconductor substrate;
- removing a portion of said gate oxide film from said substrate surface to form an exposed portion of said substrate;
- simultaneously evaporating metal and silicon on said insulting film, said exposed portion of said substrate and said gate oxide film so as to form a conductive film on said insulating film, said exposed portion of said substrate, and said gate oxide film;
- diffusing phosphorous into said substrate through said gate oxide film and said conductive film so as to form ohmic contact regions thereon by exposing said gate oxide film and said conductive film to POCl.sub.3 ;
- removing a portion of each of said conducting film and said insulating film to separate said films from each other;
- and
- ion-implanting As into said substrate so as to form at least two semiconductor regions on opposite sides of said gate oxide film.
5 more elements
Dependencies are inferred from the claim text.