Fabrication of T-shaped metal lines for semiconductor devices
AssigneeCornell Research Foundation, Inc.
InventorsPane-Chane Chao, Walter H. Ku
Life of this patent
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Abstract
A method of fabricating MESFET devices having a T-shaped gate electrode is disclosed. The method includes the formation of a single layer of resist material on a semiconductor surface; formation of a resist cavity through optical lithography, the cavity exposing a selected portion of the semiconductor surface; depositing by way of dual-angle evaporation gate walls within said resist cavity, the gate walls defining a T-shaped gate cavity; depositing gate electrode material within the gate cavity, removing the resist material, and removing the gate walls from the gate electrode material.
Claims19
A method of fabricating a low-resistance T-shaped gate electrode for a semiconductor device, comprising:
- depositing a layer of resist material on a semiconductor surface;
- defining a gate pattern in said resist material to produce a resist profile;
- forming metal gate walls within and on the surface of said resist profile by angled evaporation to produce a metallized T-shaped gate cavity, said gate cavity having a bottom opening adjacent to and exposing said semiconductor surface, the dimension of said bottom opening being determined by the thickness of said layer of resist material and the angle of evaporation of said metal;
- directly evaporating a gate material into said gate cavity, said gate material being deposited on the portion of said semiconductor surface exposed by the bottom opening of said gate cavity to form a Schottky junction at said semiconductor surface and being further deposited within said gate cavity to substantially fill said T-shaped gate cavity;
- removing said layer of resist material;
- and
- removing said gate walls.
A method of fabricating a low resistance, T-shaped gate electrode for a MESFET device, comprising:
- depositing a single layer of resist material on a semiconductor surface;
- forming a resist cavity within said layer of resist material to expose a selected portion of said semiconductor surface;
- depositing gate walls within said resist cavity by way of dual-angle evaporation, the angles of evaporation producing gate walls which define a T-shaped gate cavity having a short bottom opening at said semiconductor surface;
- depositing gate electrode material into said gate cavity to form a T-shaped electrode having a Schottky junction at said semiconductor surface;
- removing said resist material from said semiconductor surface;
- and
- removing said gate walls from said gate electrode.
Dependencies are inferred from the claim text.