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US 4,536,251 AGranted
Method for eliminating laser-induced substrate fissures associated with crystallized silicon areas
AssigneeXerox Corporation
InventorsAnne Chiang, William P. Meuli
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Abstract
A method for eliminating laser induced substrate fissures associated with laser annealed crystallization of patterned silicon areas, for increasing the yield of useable single crystal areas. The fissures are created by enhanced etching of the substrate, at the exposed edges of the areas, during the removal of a dimension stabilizing encapsulating layer. A post crystallization, high temperature anneal, in an oxidizing atmosphere prevents the enhanced etching of the substrate.
Claims10
A method for eliminating laser induced substrate fissures associated with crystallized silicon areas comprising the steps of
- providing a substrate,
- depositing a layer of polycrystalline semiconductor material upon said substrate,
- patterning said polycrystalline layer to form an array of areas,
- depositing an encapsulating layer over said patterned polycrystalline layer,
- applying thermal energy to said patterned polycrystalline layer for melting said areas and heating said substrate,
- cooling said areas and said substrate to control resolidification of said areas into single crystals,
- annealing said areas and said substrate in a heated oxidizing atmosphere, and
- removing said encapsulating layer by etching.
5 more elements
Dependencies are inferred from the claim text.