Method for improving reflow of phosphosilicate glass by arsenic implantation

A method of making a semiconductor device comprising the steps of:

• forming a region of another conductivity type in a substrate of one conductivity type;
• forming an insulator layer comprising a phosphosilicate glass layer on said substrate;
• implanting arsenic into said insulator layer;
• forming a contact window through said insulator layer for allowing a metal coverage contact to said region of another conductivity type;
• and
• reflowing said insulator layer by heating said insulator layer sufficiently to smooth said insulator layer.

A method of making a semiconductor device comprising the steps of:

• forming a plurality of regions of another conductivity type in a substrate of one conductivity type;
• forming an insulator layer comprising a phosphosilicate glass layer on said substrate;
• forming at least one layer of gates and gate interconnections on said insulating layer;
• forming a multilevel interconnect system insulating layer on said layer of gates and gate interconnections;
• implanting arsenic into said multilevel interconnect system insulator layer;
• and
• reflowing said multilevel interconnect system insulator layer by heating said multilevel interconnect system insulator layer sufficiently to smooth said insulator layer.