Back to results
US 4,533,931 AGranted
Reduction reoxidation type semiconductor ceramic condenser
AssigneeMurata Manufacturing Co., Ltd.
InventorsHarufumi Mandai, Kiyoshi Iwai, Yasuyuki Naito
Life of this patent
Estimating the term…
Abstract
A reduction reoxidation ceramic semiconductor having a central ceramic portion with a dielectric layer formed thereon by oxidation. The ohmic electrode is formed from a material (e.g. an aluminum-glass frit) that prevents formation of the dielectric layer under the ohmic electrode during reoxidation. The non-ohmic electrode is formed on the dielectric layer.
Claims10
A reduction reoxidation type ceramic semiconductor condenser comprising:
- a semiconductor ceramic portion, a layer of a first material on a surface of said ceramic portion forming an ohmic electrode thereon, a dielectric layer on another surface of said ceramic portion, said dielectric layer being formed by reoxidation of said ceramic, a layer of a second material on a surface of said dielectric layer, said second material forming a non-ohmic electrode thereon, said ohmic layer being comprised of electrode forming material capable of forming said ohmic electrode during reoxidation of said ceramic portion while preventing significant oxidation of said ceramic portion in contact with said electrode forming material.
A method of forming a reduction reoxidation type ceramic semiconductor condenser from a ceramic semiconductor, said method comprising:
- applying a layer of non-ohmic electrode forming material to one portion of said ceramic semiconductor and applying a layer of ohmic electrode forming material to another portion of said ceramic semiconductor, said ohmic electrode forming material being disposed to form said ohmic electrode on said ceramic material during reoxidation while preventing reoxidation of the portions of said ceramic semiconductor in contact with said ohmic electrode forming material;
- and exposing the ceramic semiconductor having the electrode forming layers thereon to an oxidizing atmosphere and elevated temperatures sufficient to form a dielectric layer on said ceramic semiconductor by reoxidation of the surface of said ceramic semiconductor not in contact with said ohmic electrode forming material.
Dependencies are inferred from the claim text.