Tunable semiconductor laser
AssigneeOmron Tateisi Electronics Co.
InventorsTsukasa Yamashita, Kazuhiko Mori, Masaharu Matano, Norihiro Ota
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Abstract
A tunable semiconductor laser has an active layer, an insulating film made of a piezoelectric material and formed on a portion of the active layer, and an interdigital transducer provided on the insulating film for generating a surface acoustic wave. The laser oscillation wavelength is variable by varying the wavelength of the surface acoustic wave generated by the transducer. When adapted to produce surface acoustic waves of different frequencies at different locations, the transducer affords an enlarged tunable wavelength band. A plurality of Gunn diodes effecting oscillation at different frequencies are usable in place of the transducer.
Claims13
In a tunable semiconductor laser having an active layer, the laser comprising:
- an insulating film made of piezoelectric material formed above a portion of the active layer;
- and
- means for selectively reflecting light of a specified wavelength emitted within the active layer, the reflecting means being capable of varying the wavelength of the light to be reflected and being provided on the insulating film.
In a tunable semiconductor laser having an active layer, the laser comprising:
- an insulating film made of piezoelectric material formed above a portion of the active layer;
- and
- light reflecting means comprising a plurality of interdigital transducers being provided on the insulating film and being driven by a d.c. power source.
Dependencies are inferred from the claim text.