Crucible for semiconductor manufacturing purposes and a process for manufacturing the crucible
AssigneeHeraeus Quarzschmelze GmbH
InventorHorst Albrecht
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Abstract
A crucible for semiconductor technology purposes, especially for the production of silicon crystals, comprising an outer layer portion or layer of silicon dioxide, especially an outer made from granular natural quartz, and an inner lining made from synthetic crystalline quartz is described. The inner lining has on its interior surface a thin amorphous layer suitably made by heating a synthetic quartz layer disposed over a granular natural quartz layer at a sufficient temperature for a sufficient period of time to convert at least a portion of the synthetic crystalline quartz to the amorphous state.
Claims8
A crucible for semiconductor technological purposes, especially for the production of silicon crystals comprising a silicon dioxide containing outer layer, an inner layer homogeneously bonded to the outer layer at their interface and comprising synthetic crystalline quartz, said inner layer in turn having on its surface opposed from the silicon dioxide-containing outer layer, an exposed smooth surface consisting essentially entirely of amorphous fused silica.
Dependencies are inferred from the claim text.