Method of making reference surface markings on semiconductor wafers by laser beam
AssigneeWacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
InventorsFranz Kuhn-Kuhnenfeld, Josef Kramler, Hans-Adolf Gerber
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Abstract
A method for producing contrast rich, permanent and slag-free characterizations, particularly on polished semiconductor disks is described, in which the surface for generating the surface pattern is partially melted by laser radiation. According to the invention, a surface segment corresponding to 1.5 to 6.5 times the surface area of the desired surface pattern is irradiated, and the semiconductor material is caused to melt and partially vaporize only in the center thereof.
Claims5
In a method for the characterization of semiconductor surfaces by means of surface patterns, which are each generated by melting and partial vaporization of a surface segment by means of a laser pulse, the improvement comprising the steps of:
- irradiating by means of a laser pulse a surface segment of the semiconductor surface whose surface area corresponds to 1.5 to 6.5 times the surface area of the desired surface pattern;
- and
- adjusting the energy of the laser pulse so that melting and partial vaporization of the semiconductor material takes place only in the center of said surface segment on a surface of the semiconductor material corresponding to the desired surface pattern.
Dependencies are inferred from the claim text.