Highly conductive photoelectrochemical electrodes and uses thereof
AssigneeUnion Oil Company of California
InventorJay A. Switzer
Life of this patent
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Abstract
A photoelectrode, containing a highly conductive coating material having a band gap greater than 0 to about 3.0 e.V. on a substrate containing a semiconductor material, is utilized in photovoltaic cells, photoelectrosynthesis and photoelectrocatalysis.
Claims63
A photoelectrode comprising a conductive coating material having a band gap in the range from greater than about 0.5 to about 2.35 e.V. on a substrate containing a semiconductor material, said photoelectrode further comprising a layer of material having a bandgap greater than about 3.0 e.V. between said substrate and said coating material, and said layer having an average thickness less than about 100 angstroms.
A photoelectrode comprising a coating material selected from the group consisting of Tl.sub.2 O.sub.3, CdO, PbO.sub.2, Cr.sub.2 O.sub.3, RuS.sub.2, PtCoO.sub.2, PdCoO.sub.2, PdRhO.sub.2, and PdCrO.sub.2, on a substrate containing a semiconductor.
A photoelectrode comprising a coating material containing thallium (III) oxide on a substrate containing a semiconductor.
A photoelectrode prepared by the method comprising the step of electrochemical deposition of a conductive coating material having a band gap in the range from greater than 0.5 to about 2.35 e.V. on a substrate containing semiconductor material, said photoelectrode further comprising a layer of material having a bandgap greater than about 3.0 e.V. between said substrate and said coating material, and said layer having an average thickness less than about 100 angstroms.
A photoelectrochemical process employing a photoelectrode comprising a conductive coating material having a band gap in the range from greater than 0.5 to about 2.5 e.V. on a substrate containing a semiconductor material, said photoelectrode further comprising a layer of material having a bandgap greater than about 3.0 e.V. between said substrate and said coating material, and said layer having an average thickness less than about 100 angstroms.
A photoelectrochemical process employing a photoelectrode comprising a coating material containing thallium (III) oxide on a substrate containing a semiconductor.
A photoelectrochemical cell employing a photoelectrode comprising a conductive coating material selected from the group consisting of Tl.sub.2 O.sub.3, CdO, PbO.sub.2, Cr.sub.2 O.sub.3, RuS.sub.2, PtCoO.sub.2, PdCoO.sub.2, PdRhO.sub.2, and PdCrO.sub.2, on a substrate containing a semiconductor material.
A photoelectrochemical cell employing a photoelectrode comprising a coating material containing thallium (III) oxide on a substrate containing a semiconductor.
Dependencies are inferred from the claim text.