Back to results
US 4,520,752 AGranted
Device for depositing a layer of polycrystalline silicon on a carbon tape
AssigneesCompagnie General d'Electricite, Societe Nationale Elf Aquitaine
InventorChristian Belouet
Life of this patent
Estimating the term…
Abstract
A device for depositing a layer of polycrystalline silicon on a carbon tape comprises a bath of molten silicon through which the carbon tape is drawn vertically. Two semicircular channels are supported vertically in the vicinity of the edges of the tape with their concave side towards the tape. The channels are partially immersed in the bath so as to raise the level of its surface by capillary action. The device is applicable to the manufacture of solar cells.
Claims1
Device for depositing a layer of polycrystalline silicon on a carbon tape, comprising:
- a crucible adapted to contain a bath of molten silicon,
- means for moving vertically upwards a carbon tape at least partially immersed in said bath and passing lengthwise and vertically through an equilibrium surface of said bath, whereby said layer is deposited on said tape,
- two vertical channels of semicircular cross-section adapted to be partially immersed in said bath with each one surrounding a respective lateral edge of said tape, whereby the surface of said bath is raised by capillary action in the vicinity of said lateral edges of said tape, and
- supports to which said channels are attached and which are supported by a wall of said crucible.
1 more element
Dependencies are inferred from the claim text.