Lithography system
AssigneeMicronix Partners
InventorW. Thomas Novak
Life of this patent
Estimating the term…
Loading patent…
AssigneeMicronix Partners
InventorW. Thomas Novak
Estimating the term…
A lithography system for X-ray or other beam printing on a substrate such as a silicon semiconductor wafer comprises a beam chamber (301), a beam source (302), means (309) for mounting a mask, means (308) for mounting an image sensing means (342) interiorly of the chamber, means (317, 318), for mounting a substrate (307) in multiple including six degrees of freedom and means (308, 292, 320-322) including the image sensing means to align the mask and substrate relative to one another utilizing alignment patterns on the mask and substrate, images of which are brought into registration and sensed by the image sensing means. In a preferred embodiment three sets of target images are provided so as to adjust the substrate and mask relative orientation in six degrees of freedom. The mask seals helium within the chamber. The mask and the substrate are aligned in situ in the same position in which the mask and substrate are to be exposed to the beam. Means (313, 314, 311, 312) are provided for loading masks, calibration assemblies and substrate-holding means. The source-to-substrate distance is adjustable as is the mask-to-substrate gap. To conserve helium volume adjustable optic objectives (342) are provided in the chamber to sense registration of alignment targets on each of the mask and substrate, with essentially the remainder of the optics outside the chamber. Improved compression optics (408) are also provided in the alignment system.
A lithography system for a substrate printing sequence comprising,
In a lithography system for fabricating a substrate by aligning a mask in spaced-apart relation with respect to the substrate, said apparatus including a centrally positioned main longitudinal axis perpendicular to said mask and substrate each including on spaced-apart peripheral portions thereof patterns that, when illuminated by incident radiation that conveys alignment mask information, focuses said radiation to form respective images of alignment marks, each pattern on the mask being associated with a pattern on the substrate, each pair of associated patterns being positioned in off-set relationship when viewed along an axis parallel to said main axis, means to adjustably support the mask and substrate in spaced-apart relation and means for illuminating said patterns with an off-axis radiant beam to form an array of focused images of said alignment marks the improvement comprising
In a lithography apparatus having a beam source;
A lithography system for a substrate printing sequence comprising:
In a lithography apparatus having a beam source;
In a lithography apparatus having a beam source;
In a lithography apparatus having a beam source;
Dependencies are inferred from the claim text.