US 4,513,384 A · Thin film thickness measurements and depth profiling utilizing a thermal wave detection system

Abstract

The subject invention discloses a method for non-destructively determining the thickness of layers deposited on a substrate by analyzing thermal waves generated in a sample. The methods are particularly suited for use with integrated circuit manufacturing. In the subject method, the sample is subjected to a focused periodic heat source which generates thermal waves. Either the magnitude or phase of the thermal waves generated in the sample are measured. The values obtained are normalized relative to a reference sample. The normalized values are analyzed with respect to a theoretical model of the sample to calculate the thickness of the unknown layers. In an alternate embodiment, thermal characteristics can be determined in a sample as a function of depth. The latter approach is useful for nondestructively determining dopant concentrations or lattice defects in semiconductor devices as a function of depth beneath the surface.

Claims12

Dependent claims

A method for determining the thickness of at least one layer of material deposited on a substrate by measuring the value of either the phase or magnitude parameters of thermal wave signals generated by a focused periodic heat source comprising the steps of:

deriving a model that provides expressions for the temperature at and beneath the surface of a known reference sample and for the thermoelastic response beneath the surface of the known reference sample;
focusing said periodic heat source on the uppermost layer deposited on said substrate;
measuring the value of one of said parameters of the thermal wave signals at a plurality of selected modulation frequencies of said heat source wherein the number of modulation frequencies selected is greater than the number of layers whose thickness is to be determined;
normalizing the measured value of said parameter of each modulation frequency selected relative to the value of said parameter determined for said known reference sample;
and
comparing said normalized values to expected normalized values derived from said model depicting the thermal process in said reference sample whereby the thickness of each said layer can be determined.

3 more elements

A method for determining the change in thermal characteristics as a function of depth in a nonuniform sample having impurities or defects therein by measuring the value of either the phase or magnitude parameter of thermal wave signals generated in said sample by a focused periodic heat source comprising the steps of:

deriving a model that provides expressions for the temperature at and beneath the surface of a known reference sample and for the thermoelastic response beneath the surface of the known reference sample, with said model being characterized as having a plurality of layers of known thickness;
focusing said periodic heat source on said nonuniform sample;
measuring the value of one of said parameters of said thermal wave signals generated in said nonuniform sample at a plurality of selected modulation frequencies with the number of selected modulation frequencies being greater than the number of layers defined in said model;
normalizing the measured value of said one parameter at each modulation frequency relative to the value of said one parameter determined for said known reference sample;
and
comparing said normalized values to expected normalized values derived from said model whereby the thermal characteristics of the layers in said model can be determined and therefore the depth variation of these thermal characteristics in the nonuniform sample can be evaluated.

3 more elements

Dependencies are inferred from the claim text.

Thin film thickness measurements and depth profiling utilizing a thermal wave detection system

Life of this patent

Thin film thickness measurements and depth profiling utilizing a thermal wave detection system

Life of this patent

Abstract

Claims12