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US 4,512,841 AGranted
RF Coupling techniques
AssigneeInternational Business Machines Corporation
InventorsGeorge F. Cunningham, Jr., John W. Lewis, Robert B. McClure, Daniel J. Poindexter
Life of this patent
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Abstract
An improved reactive ion plasma etching apparatus having an improved electrode, for holding the product, such as a semiconductor wafer, to be etched, provided with a plurality of apertures into which different tailored product holders are inserted so as to alter the plasma over each holder and provide more uniform etching of the product in the holder regardless of its position on the electrode.
Claims19
In a plasma etching apparatus an improved electrode for holding the product to be etched comprising:
- an electrode plate having a plurality of apertures therein;
- a workpiece holder positioned in each aperture;
- each holder for holding a wafer in a preselected position and being tailored to alter the plasma around and over the holder to provide uniform etching over the surface of the wafer in the holder.
Dependencies are inferred from the claim text.