Dual-gate MESFET combiner/divider for use in adaptive system applications
AssigneeHarris Corporation
InventorJing-Jong Pan
Life of this patent
Estimating the term…
Abstract
A dual-gate MESFET forms the basic building block for a variety of signal coupling applications for use in adaptive microwave communication systems. By controlled biasing of its electrodes, a dual-gate MESFET may be operated as an active signal combiner/divider device. As such, it is capable of providing controlled signal transfer functions, so that it may be used in a variety of adaptive system applications including controlled switching devices, channelized power dividers, active channel fitters, phase shifters, complex weighting devices, etc.
Claims27
A signal coupling device comprising:
- an input terminal to which an input signal to be divided into a plurality of output signals is to be coupled;
- a plurality of N output terminals from which respective ones of said output signals are to be derived;
- and
- a plurality of (N-1) dual-gate MESFETs, each having first and second gate electrodes, a source electrode and a drain electrode;
- and wherein
- the drain-source current path of each of said dual-gate MESFETs is connectable to a source of operating potential through a current conducting element;
- the first gate electrode of the first of said plurality of MESFETs is coupled to said input terminal;
- the first gate electrode of the second through (N-1).sup.th MESFETs is coupled to the second gate electrode of the first through (N-2).sup.th MESFETs, respectively;
- the second gate electrode of the (N-1).sup.th MESFET is coupled to the N.sup.th output terminal;
- and
- said first through (N-1).sup.th output terminals are respectively coupled to one of the source and drain electrodes of said first through (N-1).sup.th MESFETs, respectively;
- and
- where N is an integer greater than two.
A controlled signal modifying device for varying at least one of the amplitude and phase of an input signal applied thereto comprising:
- an input terminal to which said input signal is applied;
- an output terminal from which the modified signal is derived;
- first and second control terminals to which control biases are applied for controling the manner in which at least one of the amplitude and phase of said input signal is to be modified;
- and
- first and second dual-gate MESFETs each having first and second gate electrodes, a source electrode and a drain electrode;
- and wherein
- the drain-source current path of each of said dual-gate MESFETs is connectable to a source of operating potential through a current conducting element;
- and
- one of the first and second gate electrodes of said first dual-gate MESFET is coupled to said input electrode, the other of said first and second gate electrodes of said first MESFET is coupled to said first control terminal, one of the source and drain electrodes of said first MESFET is coupled to one of the first and second gate electrodes of said second dual-gate MESFET, the other of the first and second gate electrodes of said second dual-gate MESFET is coupled to said second control terminal, and one of the source and drain electrodes of said second dual-gate MESFET is coupled to said output terminal.
A controlled signal modifying device for controllably shifting the phase of an input signal applied thereto comprising:
- an input terminal to which said input signal is applied;
- an output terminal from which the phase-shifted output signal is derived;
- signal splitting means, coupled to said input terminal for splitting said input signal into a plurality of separate signals;
- a plurality of phase shifting means;
- a plurality of MESFET switches coupled between said signal splitting means and said plurality of phase shifting means, for controllably coupling a selected one of said plurality of separate signals to a respective one of said phase shifting means;
- and wherein
- the drain-source current path of each of said MESFET switches is connectable to a source of operating potential through a current conducting element, the gate of each of said MESFET switches being respectively coupled to receive one of said plurality of separate signals and a switch control signal;
- and further including
- signal combining means having a plurality of inputs coupled to said phase shifting means and an output coupled to said output terminal.
A controlled signal modifying device for controllably shifting the phase of an input signal applied thereto comprising;
- an input terminal to which an input signal is applied;
- an output terminal from which a phase-shifted output signal is derived;
- a hybrid coupler having an input coupled to said input terminal, an output coupled to said output terminal and a pair of signal coupling terminals;
- and
- a pair of controlled negative resistance MESFETs coupled to said signal coupling terminals, for controlling the phase shift of the input signal coupled through said hybrid coupler, and wherein each of said MESFETs has its drain-source current path connectable to a source of operating potential through a current conducting element.
An electrically controlled switch comprising:
- an input terminal;
- a first output terminal;
- a second output terminal;
- a dual-gate MESFET having a source electrode, a drain electrode coupled to said first output terminal, and a first gate electrode coupled to said second output terminal, and a second gate electrode coupled to said input terminal, the drain-source current path of said MESFET being connectable to a source of operating potential through a current conducting element;
- and
- bias means, coupled to said first and second gate electrodes, said source electrode and said drain electrode, for controlling the degree of coupling from said input terminal to each of said output terminals by controllably applying prescribed bias potentials between said source electrode and said first and second gate and drain electrodes.
A signal coupling device comprising:
- an input terminal to which an input signal to be divided into first and second output signals is to be coupled;
- a first output terminal from which said first output signal is to be derived;
- a second output terminal from which said second output signal is to be drived;
- and
- a dual-gate MESFET having first and second gate electrodes, a source electrode and a drain electrode, the drain-source current path being connectable to a source of operating potential through a current conducting element;
- and wherein
- said first gate electrode is coupled to said input terminal, said second gate electrode is coupled to said second output terminal and one of said source and drain electrodes is coupled to said first output terminal;
- and further comprising
- bias means, coupled to said first and second gate electrodes and said one of said source and drain electrodes, for supplying predetermined bias potentials thereto and thereby controlling preselected characteristics of said first and second output signals;
- and wherein
- said preselected characteristics include the ratio of the magnitude of said first output signal to said second output signal.
A signal coupling device comprising:
- an input terminal to which an input signal to be divided into first and second output signals is to be coupled;
- a first output terminal from which said first output signal is to be derived;
- a second output terminal from which said second output signal is to be derived;
- and
- a dual-gate MESFET having first and second gate electrodes, a source electrode and a drain electrode, the drain-source current path of said MESFET being connectable to a source of operating potential through a current conducting element;
- and wherein
- said first gate electrode is coupled to said input terminal, said second gate electrode is coupled to said second output terminal and one of said source and drain electrodes is coupled to said first output terminal;
- further comprising
- respective D.C. blocking elements coupled between said input terminal and said first gate electrode, between said first output terminal and said one of said source and drain electrodes, and between said second output terminal and said second gate electrode, and
- respective impedance matching networks coupled between said D.C. blocking elements and the respective electrodes of said dual-gate MESFET to which said D.C. blocking elements are coupled, and wherein
- each of said D.C. blocking elements comprises a section of D.C.-blocking microstrip.
For use in a microwave signal processing network wherein an input signal is coupled to a plurality of complex weighting devices and subjected to a controlled degree of amplutude and/or phase modification, the outputs of said complex weighting devices being combined with one another, a respective one of said complex weighting devices comprising:
- an input terminal to which said input signal is applied;
- an output terminal from which the modified signal is derived;
- a control terminal to which a control bias is to be applied for controlling the manner in which the phase and/or amplitude of said input signal is to be modified;
- and
- a dual-gate MESFET having first and second gate electrodes, a source electrode and a drain electrode, the drain-source current path of said dual-gate MESFET being connectable to a source of operating potential through a current conducting element;
- and wherein
- one of said first and second gate electrodes is coupled to said input electrode, the other of said first and second gate electrodes is coupled to said control terminal and one of the source and drain electrodes is coupled to said output terminal.
A signal coupling device comprising:
- a first input terminal to which a first input signal is to be applied;
- a second input terminal to which a second input signal is to be applied;
- an output terminal;
- and
- a dual-gate MESFET having first and second gate electrodes, a source electrode and a drain electrode, the source-drain path of said MESFET being connectable to a source of operating potential through a current conducting element;
- and wherein
- said first gate electrode is coupled to said first input terminal, said second gate electrode is coupled to said second input terminal, and one of said source and drain electrodes is coupled to said output terminal;
- and further comprising
- respective D.C. blocking elements coupled between said first input terminal and said first gate electrode, between said second input terminal and said second gate electrode, and between said one of said output terminal and said one of said source and drain electrodes, and
- respective impedance matching networks coupled between said D.C. blocking elements and the respective electrodes of said dual-gate MESFET to which said D.C. blocking elements are coupled, and wherein
- each of said D.C. block elements comprises a section of D.C.-blocking microstrip.
A controlled signal modifying device for controllably shifting the phase of an input signal applied thereto comprising:
- an input terminal to which said input signal is applied;
- an output terminal from which the phase-shifted output signal is derived;
- signal splitting means, coupled to said input terminal, for splitting said input signal into a plurality of separate signals;
- a plurality of phase shifting means;
- switching means, coupled between said signal splitting means and plurality of phase shifting means, for controllably coupling a selected one of said plurality of separate signals to a respective one of said phase shifting means;
- and
- signal combining means having a plurality of inputs coupled to said phase shifting means and an output coupled to said output terminal.
Dependencies are inferred from the claim text.