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US 4,504,453 AGranted
Method of manufacturing crystalline silicon carbide
AssigneeTateho Kagaku Kogyo Kabushiki Kaisha
InventorsMinoru Tanaka, Tadashi Kawabe, Masafumi Kobune
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AssigneeTateho Kagaku Kogyo Kabushiki Kaisha
InventorsMinoru Tanaka, Tadashi Kawabe, Masafumi Kobune
Estimating the term…
A method of manufacturing silicon carbide whiskers in which a carbon and silicon containing material having a thin configuration and sufficient porosity to permit both the passage of a gas therethrough and to provide spaces for growing whiskers therein is charged on a gas-permeable tray, and heated in a furnace of non-oxidizing atmosphere. The tray is moved intermittently through a series of temperature zones, increasing stage-by-stage from about 400.degree. C. to 1,300.degree. C., while a non-oxidizing gas is circulated through the porous material to remove any impurities. Thereafter, the heated tray is intermittently moved through a series of increasing temperature stages from about 1,350.degree. C. to 1,450.degree. C. to effect whisker growth. The treated silicon carbide-containing material is dispersed in a two-phase mixture of a hydrophobic organic liquid and water. The desired silicon carbide whiskers can be isolated from the aqueous phase.
A method of manufacturing silicon carbide comprising the following steps:
A method of separating a collection of silicon carbide comprising dispersing material having generated and grown silicon carbide whiskers on the internal and external surfaces thereof into a mixture of a hydrophobic organic liquid, water, and hydrochloric acid, and after keeping it at rest, separately isolating said whiskers in the water phase and the rest of the material in the organic liquid phase.
A method of manufacturing silicon carbide comprising the following steps:
A method of separating silicon carbide whiskers from a silicon carbide containing mixture comprising:
Dependencies are inferred from the claim text.