Magnetic bubble memory device
AssigneeHitachi, Ltd.
InventorsHiroshi Umezaki, Naoki Koyama, Yooji Maruyama, Yutaka Sugita
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Abstract
A magnetic bubble memory device comprises an ion-implanted region for information storage formed in a surface of a magnetic material layer and a permalloy transfer path formed near an ion implantation transfer path defined by the edge of the ion-implanted region for reading information from the ion implantation transfer path or writing information in the ion implantation transfer path. The ion implantation depth in a portion of the ion-implanted region near the permalloy transfer path is continuously changed to provide an inclined edge of the ion-implanted region.
Claims4
A magnetic bubble memory device comprising:
- a layer of magnetic material which holds magnetic bubbles therein and in which the magnetic bubbles are propagated;
- an ion-implanted region for bubble storage formed with a predetermined pattern in a surface of said magnetic material layer, a first bubble transfer means being defined by the edge of said ion-implanted region bounding a non-implanted region in said magnetic material layer;
- and
- a second bubble transfer means of a permalloy formed with a predetermined pattern in vicinity of said first bubble transfer means for reading or writing the magnetic bubbles therefrom or therein, the ion implantation depth in a portion of said ion-implanted region in vicinity of said second bubble transfer means continuously changing so that it becomes shallower towards said second bubble transfer means and the edge of said portion of the ion-implanted region is inclined at a predetermined angle relative to a vertical direction.
Dependencies are inferred from the claim text.