Dielectrically isolated semiconductor devices
AssigneeAT&T Bell Laboratories
InventorsRobert C. Frye, Joseph E. Griffith, Yiu H. Wong
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Abstract
Dielectrically isolated single crystal silicon of high quality is produced by an extremely convenient process. This process involves the fusing of two silicon bodies where at least one of these bodies has a region of silicon oxide. The bodies are contacted so that the silicon oxide is at an interface between the two bodies. The bodies are then heated to an elevated temperature while applying a nominal electrical potential across the interface. This combination of applied potential and temperature permanently fuses the two bodies without producing any significant damage to the crystal quality of these bodies.
Claims6
A process for producing a dielectrically isolated silicon region comprising the steps of (1) contacting a first and second body so that a silicon oxide and OH moieties are present at the interface between said first and second body and fusing said first and second bodies, wherein said fusion is accomplished by producing an electrical potential drop across said interface of less than 100 volts and subjecting said interface to a temperature of at least 1050 degrees C. whereby said silicon oxide forms at least a portion of said dielectric isolation for a region of single crystal silicon in said first or second body and (2) forming a device in said single crystal region of silicon.
Dependencies are inferred from the claim text.