Etching techniques
AssigneeAT&T Bell Laboratories
InventorsJoel M. Cook, Vincent M. Donnelly, Daniel L. Flamm, Dale E. Ibbotson, John A. Mucha
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Abstract
A highly selective--greater than 100 to 1--etch for silicon, tantalum, tantalum silicide and tantalum nitride is achieved by using polyatomic halogen fluorides. The selectivity is achievable without employing plasmas or wet etching.
Claims22
A process for manufacturing a device comprising the steps of (1) subjecting a substrate to an etchant to produce selective etching of a first region of said substrate relative to a second region and (2) completing said device characterized in that said etchant comprises a polyatomic halogen fluoride and said first region comprises a non-oxide tantalum composition wherein said substrate is subjected to said polyatomic halogen fluoride in the substantial absence of a plasma.
A process for treating a body comprising a first region and a second region, said process comprising the step of subjecting said body to an etchant to etch said first region, characterized in that said etchant comprises a polyatomic halogen fluoride wherein said substrate is subjected to said polyatomic halogen fluoride in the substantial absence of a plasma and wherein a substantial fraction of the thickness of said first region is removed.
A process for manufacturing a device comprising the steps of (1) subjecting a substrate to an etchant to produce selective etching of a first region of said substrate relative to a second region and (2) completing said device characterized in that said etchant comprises a polyatomic halogen fluoride wherein said substrate is subjected to said polyatomic halogen fluoride in the substantial absence of a plasma, and wherein a substantial fraction of the thickness of said first region is removed.
A process for manufacturing a device comprising the steps of (1) subjecting a substrate to an etchant to produce selective etching of a first region of said substrate relative to a second region and (2) completing said device characterized in that said etchant comprises a polyatomic halogen fluoride wherein said substrate is subjected to said polyatomic halogen fluoride in the substantial absence of a plasma and wherein said first region comprises a member chosen from the group consisting of silicon, molybdenum silicide, molybdenum, tungsten, and tungsten silicide.
Dependencies are inferred from the claim text.