Storage device having a semiconductor target

An electron device having information storage capabilities, comprising:

• a. an evacuated envelope;
• b. a self-supporting storage target disposed within said envelope, comprising
• i. a signal layer consisting essentially of semiconductor material of substantially single conductivity type and having an energy bandgap of between 0.6 ev. and 1.2 ev., said signal layer having a major surface, and
• ii. a secondary electron emissive storage layer disposed contiguous to said major surface, said storage layer consisting essentially of an insulating compound of semiconductor material, one of said layers being interrupted and exposing portions of the other layer;
• c. terminal means connected to said signal layer for applying electrical potential thereto and for extracting electrical signals therefrom;
• d. an electron gun disposed within said envelope in spaced relation with and opposite said storage layer;
• e. a collector electrode disposed between and in spaced relationship with said electron gun and said storage target, said collector electrode being disposed to intercept secondary electrons emitted from said storage target;
• and
• f. terminal means for applying electrical potential to said collector electrode.

An electron device having information storage capabilities, comprising:

• a. an evacuated envelope;
• b. a storage target disposed within said envelope, comprising:
• i. a substrate consisting essentially of semiconductor material of substantially single conductivity type and having a major surface, and
• ii. a plurality of discrete storage elements disposed upon said major surface and spaced apart to expose portions of said substrate, said elements consisting essentially of an insulating compound of semiconductor material;
• and
• c. means for writing, reading, and erasing information on said storage target.

An electron device having information storage capabilities, comprising:

• a. an evacuated envelope;
• b. a storage target disposed within said envelope including a signal layer consisting essentially of semiconductor material of substantially single conductivity type and a storage layer disposed contiguous to said signal layer, said storage layer comprising an insulating compound of semiconductor material, one of said layers being discontinuous and exposing portions of the other layer;
• and
• c. means for writing, reading, and erasing information on said target.

An electronic storage tube including a target which is comprised of a pattern including a plurality of alternating discrete insulating strips and conducting strips, the tube comprising:

• means for applying a signal to the target to establish a desired stored charge distribution on the discrete insulating strips;
• and
• means for detecting the stored charge distribution on the target, and wherein
• the conducting strips are electrically connected to each other and are formed of silicon;
• and
• the discrete insulating strips are formed of silicon dioxide.

An electronic storage tube comprising:

• a target having a pattern of alternating conducting strips and discrete insulating strips;
• an output terminal, the conducting strips being electrically connected to the output terminal;
• means for applying an input signal to the target such that a signal is stored thereon in the form of a desired stored charge distribution on the insulating strips;
• means for scanning the target and obtaining an output signal at the output terminal which output signal is a function of the stored charge distribution on the insulating strips;
• and wherein
• the conducting strips are formed of silicon;
• and
• the insulating strips are formed of silicon dioxide.