US 4,489,478 A · Process for producing a three-dimensional semiconductor device

Abstract

At present, the majority of semiconductor devices are two-dimensional large-scale integration (LSI) semiconductor devices in which the semiconductor elements are arranged in a semiconductor layer in a two-dimensional manner. An aim of the techniques of production of semiconductor devices is to achieve, in the future, a super high integration amounting to 16 M bits or more per chip. For attaining such a super high integration, a multilayer semiconductor device must be produced. A method for producing a three-dimensional LSI semiconductor device prevents wasteful formation of semiconductor layers and insulating films. The method includes the step of forming, in a first semiconductor layer, a monitoring device for evaluating the circuit function of the semiconductor elements in the first semiconductor layer and subsequently forming another semiconductor layer above the first semiconductor layer. A preferred embodiment also includes the steps of: forming the impurity regions of the semiconductor elements by ion implantation; activating the implanted impurity ions by energy beam irradiation; and forming the insulating material regions of the semiconductor elements by high-pressure oxidation, or by low-temperature sputtering.

Claims9

Dependent claims

A process for producing a semiconductor device comprising a substrate, first and second semiconductor layers formed on the substrate, and an insulating film formed between the first and second semiconductor layers for insulating the first and second semiconductor layers from one another, the process comprising the steps of:

(a) preparing the substrate;
(b) forming the first semiconductor layer on the substrate;
(c) forming a first group of circuit elements, including a plurality of first semiconductor elements, in the first semiconductor layer;
(d) forming a first monitoring device, for monitoring the properties of the first group of circuit elements, on the first semiconductor layer;
(e) measuring the properties of the first monitoring device, thereby evaluating a circuit function of the first semiconductor elements;
(f) forming the insulating film on the first semiconductor layer;
(g) forming the second semiconductor layer on the insulating film;
(h) forming a second group of circuit elements, including a plurality of second semiconductor elements, in the second semiconductor layer;
(i) forming a second monitoring device on the second semiconductor layer;
(j) forming a conductor, extending through the insulating film, for electrically connecting the first monitoring device in the first semiconductor layer with the upper surface of the second semiconductor layer;
and
(k) measuring the properties of the first monitoring device via the conductor.

9 more elements

Dependencies are inferred from the claim text.

Process for producing a three-dimensional semiconductor device

Life of this patent

Process for producing a three-dimensional semiconductor device

Life of this patent

Abstract

Claims9