Method of fabricating a multi-layer type semiconductor device including crystal growth by spirally directing energy beam

A method of fabricating a multilayer-type semiconductor device comprising the steps of:

• forming a first-layer semiconductor element on the surface of each of a plurality of semiconductor substrates disposed on a supporting base;
• forming at least one rectangular opening in an insulating film located on a scribe line of said semiconductor substrate to expose said semiconductor substrate through said opening;
• depositing a polycrystal semiconductor film on said insulating film and the semiconductor substrate exposed through said opening;
• irradiating an energy beam on said polycrystal semiconductor film spirally relative to said semiconductor substrate, in such a manner that said beam passes said at least one opening during one revolution, thereby to crystallize said polycrystal semiconductor film, the diameter of the irradiated energy beam being larger than the maximum length of the opening, the semiconductor substrate exposed through said opening serving to provide a seed crystal for crystallization of said polycrystal semiconductor film;
• and
• forming a second-layer semi-conductor element on said crystallized layer.