Stacked structure having matrix-fibered composite layers and a metal layer
AssigneeHitachi, Ltd.
InventorsAkio Chiba, Seiki Shimizu, Keiichi Kuniya, Jin Onuki
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Abstract
Herein disclosed is a stacked or laminated structure which is rigidly integrated by sandwiching a metal layer between a first matrix-fiber composite layer prepared to have as a whole a thermal expansion coefficient and a second matrix-fiber layer prepared to have as a whole another thermal expansion coefficient different from that of the first matrix-fiber composite layer. The intervening metal layer acts as a buffer for the first and second matrix-fiber composite layers. The stacked structure according to the present invention can by used as the chip carrier of a semiconductor device, for example.
Claims12
A stacked structure comprising:
- a first composite layer including a first metal matrix and first fibers embedded therein, which first fibers have a thermal expansion coefficient lower than that of said first metal matrix so that said first composite layer has as a whole a first thermal expansion coefficient lower than that of said first metal matrix;
- a second composite layer including a second metal matrix and second fibers embedded therein, which second fibers have a thermal expansion coefficient lower than that of said second metal matrix so that said second composite layer has as a whole a second thermal expansion coefficient lower than that of said second metal matrix;
- and
- a metal layer sandwiched between said first and second composite layers and joined directly and rigidly to said first and second composite layers, wherein said second thermal expansion coefficient of said second composite layer is lower than said first thermal expansion coefficient of said first composite layer;
- said first and second metal matrices are made of the same metal;
- said first and second fibers are made of the same material and are arranged non-directionally respectively;
- and
- said metal layer is thinner than said first and second composite layers.
A stacked structure of a layered shape for an electrically conducting member to be incorporated in a semiconductor device, in which said stacked structure is sandwiched between at least one semiconductor chip and a supporting member, said stacked structure comprising:
- a first composite layer including a first metal matrix and first fibers embedded therein, which first fibers have a thermal expansion coefficient equal to or lower than that of the semiconductor to the extent that said first composite layer has as a whole a first thermal expansion coefficient close to that of the semiconductor;
- a second composite layer including a second metal matrix and second fibers embedded therein, which second fibers have a thermal expansion coefficient equal to or lower than that of said second metal matrix to the extent that said second composite layer has as a whole a second thermal expansion coefficient close to that of the supporting member;
- and
- a metal layer sandwiched between said first and second composite layers and joined directly and rigidly to said first and second composite layers wherein said first and second metal matrices are made of the same metal;
- said first and second fibers are made of the same material and are arranged non-directionally respectively;
- and
- said metal layer is thinner than said first and second composite layers.
Dependencies are inferred from the claim text.